FQP22N30

Single FETs, MOSFETs Overview

The FQP22N30 is a high-voltage N-channel Power MOSFET from onsemi, utilizing the proprietary QFET® technology. It is designed for general-purpose switching applications requiring robust performance in harsh environments. The device features a 300 V drain-source voltage rating and supports a continuous drain current of 21 A. With a maximum on-resistance of 160 mΩ at 10 V gate drive, it offers low conduction losses. The component is housed in a TO-220 package, suitable for through-hole mounting.

Single FETs, MOSFETs Feature Summary

• QFET® technology provides superior ruggedness and reliability compared to standard planar MOSFETs.
• Low on-resistance minimizes conduction losses for improved efficiency.
• High voltage capability allows use in demanding power supply designs.

Single FETs, MOSFETs Applications

• DC-DC converters
• Motor control circuits
• Power factor correction (PFC) stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to ensure the correct packaging configuration matches your assembly requirements. Confirm that the component meets all relevant environmental standards required for your final product certification. Cross-reference the datasheet revision date to ensure compatibility with your design specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel MOSFET with enhanced ruggedness is required. The QFET® structure offers better avalanche energy handling than conventional planar devices. Ensure the thermal management solution accommodates the power dissipation characteristics defined in the datasheet for the intended operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's QFET® family of high-voltage MOSFETs. These devices are engineered to replace standard planar MOSFETs in applications where reliability and surge current handling are critical. The FQP22N30 specifically targets the 300 V segment of the power discrete market.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 300 V rating, N-channel type, and TO-220 package. Verify pinout compatibility and electrical parameters such as Rds(on) and Id before substitution.

Single FETs, MOSFETs FAQ

What distinguishes the QFET® technology in the FQP22N30?

QFET® technology uses a trench-gate structure that offers higher ruggedness and better avalanche performance compared to traditional planar MOSFETs.

Is the FQP22N30 suitable for high-frequency switching?

Yes, it is designed for general-purpose switching applications, including DC-DC converters and motor drives, though specific frequency limits depend on the circuit design and thermal constraints.