FQPF10N60CF

Single FETs, MOSFETs Overview

The FQPF10N60CF is a 600V N-Channel MOSFET manufactured by onsemi, utilizing planar stripe DMOS technology. It features a maximum drain current of 9A and a typical on-state resistance of 0.8Ω at VGS = 10V. The device includes an integrated body diode with a peak reverse recovery charge of 0.3µC. Key electrical parameters include a total gate charge of 44nC and a reverse transfer capacitance of 18pF. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-220F package.

Single FETs, MOSFETs Feature Summary

• Utilizes proprietary planar stripe DMOS technology for minimized on-state resistance and superior switching performance.
• Capable of withstanding high energy pulses in avalanche and commutation modes.
• Features improved dv/dt capability for enhanced reliability during fast switching operations.

Single FETs, MOSFETs Applications

• High efficiency switched mode power supplies
• Active power factor correction circuits
• Electronic lamp ballasts based on half bridge topology

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer origin, as the component was originally developed by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the TO-220F package dimensions match your PCB footprint requirements. Ensure compliance with RoHS standards if required by your manufacturing process. Check for any specific handling precautions related to electrostatic discharge during assembly.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust high-voltage switching capabilities with low conduction losses. The TO-220F package provides adequate thermal management for moderate power dissipation applications. Consider the 0.8Ω on-resistance for efficiency calculations under full load conditions. Evaluate the avalanche energy rating if the application involves inductive loads or potential voltage spikes.

Single FETs, MOSFETs Part Context

This part belongs to the FRFET family of power MOSFETs designed for general-purpose high-voltage switching. It shares technological similarities with other 600V N-Channel devices from the same lineage, focusing on balancing low on-resistance with fast switching speeds. The TO-220F variant offers a through-hole mounting option suitable for various industrial and consumer electronics assemblies.

Single FETs, MOSFETs Replacement Considerations

Direct replacements may include the FQP10N60CF (TO-220 package) or other 600V/9A N-Channel MOSFETs with comparable RDS(on) and gate charge specifications. Verify pinout compatibility and thermal resistance characteristics before substituting. Cross-reference datasheets to ensure equivalent avalanche ratings and dv/dt capabilities for critical applications.