Single FETs, MOSFETs FQPF9N30 product image

FQPF9N30

  • Description:MOSFET N-CH 300V 6A TO220F
  • Series:QFET®
  • Mfr:onsemi
  • Package:Tube

SKU:2c12ea307c27 Category: Brand:

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FQPF9N30 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 300V 6A TO220F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQPF9N30

  • Description:MOSFET N-CH 300V 6A TO220F
  • Series:QFET®
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):300 V
  • Current - Continuous Drain (Id) @ 25°C:6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:450mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:740 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):42W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F-3
  • Package / Case:TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for FQPF9N30

FQPF9N30

Single FETs, MOSFETs Overview

The FQPF9N30 is a 300V N-Channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor. It utilizes planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. Key electrical parameters include a continuous drain current of 6.0A at 25°C case temperature, a maximum drain-source voltage of 300V, and a typical gate charge of 17nC. The device features a TO-220F package with a thermal resistance junction-to-case of 2.98°C/W.

Single FETs, MOSFETs Feature Summary

  • Utilizes proprietary planar stripe DMOS technology for minimized on-state resistance
  • Capable of withstanding high energy pulses in avalanche and commutation modes
  • Features improved dv/dt capability and fast switching characteristics
  • Subjected to 100% avalanche testing for reliability verification

Single FETs, MOSFETs Applications

  • High efficiency switching DC/DC converters
  • Switch mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer status as this component was originally produced by Fairchild Semiconductor. Confirm if the part has been discontinued or if equivalent sourcing options are available from current distributors. Ensure that any replacement components meet the original electrical specifications and package dimensions required for your specific circuit design.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust switching performance at 300V. Consider the thermal management requirements given the 42W power dissipation rating at 25°C case temperature. Evaluate the gate charge and capacitance values against your driver capabilities to ensure optimal switching speeds and minimal losses in your power conversion topology.

Single FETs, MOSFETs Part Context

This component belongs to the QFET series of power MOSFETs designed for high-efficiency power conversion. The series emphasizes low on-resistance and high avalanche energy tolerance. The FQPF9N30 specifically targets medium-current applications where reliable switching and thermal stability are critical for system longevity and performance.

Single FETs, MOSFETs Replacement Considerations

Check for direct equivalents from other manufacturers offering identical pinouts and electrical ratings. Verify that any substitute maintains the same TO-220F package dimensions and thermal characteristics to ensure compatibility with existing heatsinking solutions.

FQPF9N30FQPF9N30

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