FQU2N90TU-AM002

Single FETs, MOSFETs Overview

The FQU2N90TU-AM002 is an N-channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor. It utilizes proprietary planar stripe and DMOS technology to achieve low on-state resistance and superior switching performance. The device features a drain-source breakdown voltage of 900 V, a continuous drain current of 1.7 A, and a maximum on-resistance of 7.2 Ω at VGS = 10 V. Packaged in TO-251-3 (TO-251), it supports through-hole mounting with a power dissipation rating of 2.5 W and operates within a temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Utilizes proprietary planar stripe and DMOS technology for reduced on-state resistance
• Engineered for high avalanche energy strength and superior switching performance
• Features low gate charge and low reverse transfer capacitance for efficient operation

Single FETs, MOSFETs Applications

• Switched mode power supplies
• Active power factor correction circuits
• Electronic lamp ballasts

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix AM002 against official Fairchild documentation to confirm exact packaging or tape-and-reel specifications. Ensure compatibility with the standard FQU2N90TU electrical parameters. Confirm RoHS compliance status as indicated in the latest datasheet revisions. Validate that the TO-251-3 package dimensions match your PCB footprint requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust avalanche capability and low conduction losses. The 900 V rating suits industrial and consumer power conversion systems. Consider the 1.7 A current limit and 7.2 Ω on-resistance for thermal management design. The TO-251-3 package offers a balance between thermal performance and board space efficiency for through-hole assembly.

Single FETs, MOSFETs Part Context

This part belongs to the FQU2N90 series of N-channel QFET MOSFETs from Fairchild Semiconductor. The series is characterized by high-voltage capabilities and optimized switching speeds. The TU suffix typically denotes the TO-251-3 through-hole package variant. These devices are designed to replace older generation MOSFETs in high-efficiency power supply designs.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other 900V N-channel MOSFETs in TO-251 packages with comparable RDS(on) and ID ratings. Verify pinout compatibility and thermal characteristics when cross-referencing with equivalent parts from other manufacturers.