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The FR900R12IP4DBPSA1 is a PrimePACK™3+ module featuring Trench/Fieldstop IGBT4 and an Emitter Controlled Diode. It provides a collector-emitter voltage of 1200 V and a continuous DC collector current of 900 A at TC = 100°C. The device includes an integrated NTC temperature sensor with a rated resistance of 5.0 kΩ at 25°C. Key electrical parameters include a typical VCEsat of 1.70 V, a repetitive peak collector current of 1800 A, and a maximum junction temperature of 150°C. The module weighs 1400 g and utilizes a copper baseplate.
Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration details. Ensure compliance with RoHS standards and check for any relevant REACH-SVHC declarations before procurement. Confirm that the component meets all necessary industrial qualification requirements for the intended deployment environment.
Select this module for applications requiring robust chopper configurations or switched reluctance drives. Evaluate thermal management needs based on the specified junction-to-case thermal resistance values. Verify that the gate drive circuitry supports the required ±15 V operating range and internal gate resistor specifications for optimal switching performance.
This component belongs to the PrimePACK™3+ series from Infineon Technologies. It integrates Trench/Fieldstop IGBT4 technology with an Emitter Controlled Diode. The module is designed for industrial power conversion applications, offering high mechanical robustness and insulation capabilities suitable for demanding operational environments.
Public confirmed substitute part numbers are not available in the provided datasheet.