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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FS100R07N2E4BOSA1 is an IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology. It features a collector-emitter voltage (VCES) of 650 V and a continuous DC collector current (IC nom) of 100 A at TC = 70°C. The repetitive peak collector current (ICRM) reaches 200 A for 1 ms pulses. Typical collector-emitter saturation voltage (VCE sat) is 1.70 V at Tvj = 25°C. Total power dissipation (Ptot) is 335 W at TC = 25°C. The module includes an integrated NTC temperature sensor with a rated resistance (R25) of 5 kΩ at 25°C. Operating junction temperature ranges from -40°C to 150°C.
Verify the specific ordering suffix BOSA1 against official documentation to confirm exact manufacturing details. Confirm component authenticity through authorized channels. Check datasheet revision status as preliminary data may differ from final specifications. Ensure compliance with RoHS directives before integration into production systems.
Evaluate thermal resistance values for heatsink design requirements. Consider gate resistor selection to optimize switching losses and minimize electromagnetic interference. Verify insulation test voltage ratings for system safety compliance. Assess stray inductance impact on voltage spikes during high-speed switching operations.
This component belongs to the EconoPACK™2 series, designed for industrial power applications. It integrates Trench/Fieldstop IGBT4 chips with Emitter Controlled 4 diodes. The package utilizes solder contact technology for reliable electrical connections. UL approval (E83335) indicates compliance with specific safety standards for electronic components.
Consult official replacement lists for updated generations like the N3E4 or N4E4 variants. Verify pin compatibility and mounting dimensions when substituting modules. Review updated electrical characteristics to ensure performance alignment with original design parameters.