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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FS100R07N3E4BOSA1 is a Trench/Fieldstop IGBT4 module with an integrated Emitter Controlled 4 diode and NTC sensor. It features a collector-emitter voltage (VCES) of 650 V and a continuous DC collector current (IC nom) of 100 A at TC = 70°C, with a repetitive peak collector current (ICRM) of 200 A. The typical collector-emitter saturation voltage (VCE sat) is 1.70 V at Tvj = 25°C. Total power dissipation (Ptot) reaches 335 W at TC = 25°C. The module operates within a junction temperature range of -40°C to +150°C.
Verify the exact ordering code against official Infineon documentation before procurement. Confirm that the BOSA1 suffix aligns with specific manufacturing or testing requirements. Ensure compatibility with existing system interfaces and mounting hardware specifications.
Evaluate the 650 V blocking voltage and 100 A current rating against the target application's electrical demands. Consider the thermal resistance values and operating temperature limits when designing the cooling solution. Verify gate drive requirements match the specified threshold and internal gate resistor characteristics.
This component belongs to the EconoPACK™3 series from Infineon Technologies. It utilizes Trench/Fieldstop IGBT4 technology combined with an Emitter Controlled 4 diode. The module is designed for industrial applications requiring robust switching performance and high short-circuit tolerance.
Consult official Infineon replacement guides for direct substitutes. Verify pinout compatibility and thermal interface dimensions before swapping components.