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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FS100R12KS4BOSA1 is a silicon N-channel IGBT module from Infineon Technologies, belonging to the IGBT2 Fast series. It features a four-pack configuration housed in an Econo 3 package with screw mount installation. The device supports a maximum collector-emitter voltage of 1.2 kV and delivers a continuous collector current of 130 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.2 V, a gate-emitter leakage current of 400 nA, and a power dissipation rating of 660 W. The module operates within a temperature range of -40°C to +125°C, with a maximum gate-emitter voltage of 20 V.
Verify the specific ordering suffix against official datasheets to confirm pinout compatibility and terminal configuration. Confirm RoHS compliance status through manufacturer documentation before integration. Ensure thermal interface materials are compatible with the Econo 3 housing surface requirements for reliable heat transfer.
Select this component when a 1.2 kV rating and 130 A current capacity are required in a four-pack topology. Compare the 3.2 V saturation voltage against alternative modules to evaluate conduction losses. Verify that the 125°C maximum junction temperature aligns with the target application's thermal design constraints.
This module is part of the broader IGBT2 Fast family, which focuses on fast switching characteristics for industrial applications. It shares the Econo 3 form factor with other high-power modules, facilitating standardized mechanical integration. The BOSA1 suffix typically denotes specific tape-and-reel or tray packaging variations within the product line.
Direct replacements must match the 1.2 kV / 130 A specifications and Econo 3 footprint. Consider the F4-100R12KS4 for similar performance profiles. Verify pin compatibility and thermal resistance values before substituting.