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The FS100R12KT4BOSA1 is a six-pack IGBT module from Infineon's Trenchstop IGBT4 series, housed in an EconoPACK™ 2 package. It features a collector-emitter voltage of 1200 V and a nominal continuous DC collector current of 100 A at 95°C case temperature. The typical collector-emitter saturation voltage is 1.75 V at 25°C, with a maximum of 2.10 V at 150°C. The integrated emitter-controlled diode exhibits a forward voltage of 1.70 V at 25°C. Total power dissipation reaches 515 W at 25°C, and the junction-to-case thermal resistance is 0.29 K/W per IGBT.
Verify the specific BOSA1 suffix against official documentation to confirm compliance details. Confirm that the component matches the preliminary data specifications provided in the datasheet revision 2.0. Ensure sourcing channels provide valid traceability for industrial-grade components.
Select this module for applications requiring 1200 V blocking capability and 100 A continuous current handling. Evaluate the 0.29 K/W junction-to-case thermal resistance for heatsink sizing. Consider the 19 nH stray inductance when designing gate drive circuits to minimize voltage overshoot during switching transitions.
This component belongs to the EconoPACK™ 2 family designed for compact power conversion systems. It utilizes Trenchstop IGBT4 technology to balance low conduction losses with manageable switching speeds. The six-pack configuration integrates three half-bridge legs into a single unit for simplified assembly.
Direct replacements within the same series include the FS100R12KT4G. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference datasheets to ensure equivalent electrical ratings and packaging dimensions match the original design requirements.