FS100R12N2T4BPSA2

Overview

The FS100R12N2T4BPSA2 is a six-pack IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology and Emitter Controlled 4 diodes. It features an integrated NTC temperature sensor and operates within a junction temperature range of -40°C to 150°C. The collector-emitter voltage (VCES) is rated at 1200 V, with a continuous DC collector current (IC nom) of 100 A at TC = 95°C and Tvj max = 175°C. The repetitive peak collector current (ICRM) reaches 200 A for 1 ms pulses. At Tvj = 25°C, the typical collector-emitter saturation voltage (VCEsat) is 1.75 V, while the diode forward voltage (VF) is 1.70 V. Thermal resistance from junction to case is 0.302 K/W per IGBT and 0.454 K/W per diode.

Feature Summary

• Integrates Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes for optimized switching performance.
• Features an Al2O3 substrate providing low thermal resistance and high power cycling capability.
• Includes an embedded NTC thermistor for precise internal temperature monitoring.
• Utilizes EconoPACK™2 packaging with a copper base plate for efficient heat dissipation.

Applications

• Auxiliary inverters
• Motor drives
• Servo drives

Procurement Notes

Verify component authenticity by cross-referencing the barcode and DMX codes on the module label against official Infineon databases. Confirm that the material number and production order number match the ordered specifications. Ensure compliance with RoHS directives and check for any specific handling requirements related to the integrated NTC sensor during assembly.

Selection Notes

Select this module for applications requiring robust thermal cycling endurance and positive temperature coefficient characteristics in VCEsat. Evaluate the 19 nH stray inductance for high-frequency switching environments. Consider the 0.302 K/W junction-to-case thermal resistance when designing heatsink solutions to maintain the operating junction temperature within the specified -40°C to 150°C range under continuous load conditions.

Part Context

This component belongs to the FSXR12N series, representing Infineon's industrial-grade IGBT modules. It utilizes the EconoPACK™2 form factor, which is designed for compact integration in power electronics. The 'T4' designation indicates the specific generation of Trench/Fieldstop IGBT technology employed, offering improved efficiency compared to previous generations.

Replacement Considerations

Direct replacements include the FS100R12KT4G, which shares similar electrical ratings but utilizes the EconoPACK™3 package. Verify mechanical dimensions and pinout compatibility before substitution. Other variants within the FS100R12 family may offer different thermal or electrical characteristics; consult the official datasheet for detailed comparison.

FAQ

What is the maximum short-circuit withstand time for this module?

The module can withstand a short circuit for up to 10 µs at Tvj = 150°C with VCC = 800 V and VGE ≤ 15 V.

What is the isolation test voltage rating?

The isolation test voltage (VISOL) is rated at 2.5 kV RMS for 1 minute at 50 Hz between terminals and heatsink.

How does the VCEsat behave with temperature changes?

The VCEsat exhibits a positive temperature coefficient, which facilitates safe parallel operation of multiple modules.