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The FS100R12W2T7B11ABPSA2 is a six-pack IGBT module from Infineon’s Trenchstop IGBT7 series, utilizing silicon technology. It features a 1200 V collector-emitter voltage rating and a continuous collector current of 75 A at 25°C. The device incorporates emitter-controlled diodes with a saturation voltage of 1.5 V. Designed for high-temperature operation, it supports junction temperatures up to 175°C and includes an integrated NTC thermistor for thermal monitoring.
Verify the specific suffix B11 against official Infineon documentation to confirm pinout compatibility and thermal interface specifications. Ensure that the required gate drive voltage levels align with the Trenchstop IGBT7 characteristics before integration into the circuit design.
Select this component when a 1200 V rating and 75 A continuous current capacity are required within a six-pack configuration. The inclusion of emitter-controlled diodes makes it suitable for applications demanding low reverse recovery charge. Consider the EasyPACK form factor for mechanical integration constraints.
This module belongs to the Trenchstop IGBT7 family, representing an evolution in silicon-based power switching technology. It succeeds earlier generations by offering improved efficiency through reduced switching losses while maintaining robustness for industrial environments.
Cross-reference part numbers such as FS100R12W2T7B11BOMA1 for potential functional equivalents. Verify that any substitute maintains identical voltage ratings, current capabilities, and mounting dimensions to ensure system compatibility.