ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
FS10ASJ-2-T13#B00 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is MOSFET N-CH. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FS10ASJ-2-T13#B00
- Description：MOSFET N-CH
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FS10ASJ-2-T13#B00
FET, MOSFET Arrays Overview
The FS10ASJ-2-T13#B00 is a high-speed switching N-channel silicon metal-oxide semiconductor field-effect transistor manufactured by Renesas Electronics Corporation. This discrete power component features a single element configuration with a drain current rating of 10A and a maximum drain-source voltage of 100V. The device exhibits an on-resistance of 0.21 ohms, optimized for efficient power handling in switching applications. It is designed for lead-free compliance and RoHS standards, ensuring environmental safety while maintaining robust electrical performance for industrial and consumer electronic circuits requiring rapid switching capabilities.
FET, MOSFET Arrays Feature Summary
- High-speed switching capability for N-channel operation
- Silicon metal-oxide semiconductor construction
- Lead-free and RoHS compliant manufacturing
FET, MOSFET Arrays Applications
- General purpose power switching circuits
- Industrial control systems
- Consumer electronics power management
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix #B00 against official Renesas documentation to confirm package type and tape-and-reel specifications. Ensure that the requested quantity aligns with standard shipping configurations defined in the manufacturer's datasheet. Cross-reference the full part number to distinguish between bulk and reel packaging options available from authorized distributors.
FET, MOSFET Arrays Selection Notes
Select this component when a 100V N-channel MOSFET with 10A continuous drain current is required for high-speed switching applications. Consider the 0.21 ohm on-resistance for thermal management and efficiency calculations. Verify that the package style matches the PCB footprint requirements and that the operating temperature range meets the system's environmental constraints.
FET, MOSFET Arrays Part Context
This part belongs to the FS10ASJ series of high-speed switching N-channel MOSFETs from Renesas. The series is characterized by low on-resistance and fast switching times, suitable for various power conversion and load switching tasks. The specific model FS10ASJ-2-T13#B00 represents a particular variant within this lineup, distinguished by its specific packaging and compliance certifications.
FET, MOSFET Arrays Replacement Considerations
Publicly confirmed substitute part numbers are not provided in the available source material. Consult official Renesas cross-reference guides or distributor databases for equivalent components meeting identical electrical and mechanical specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
