FS10R12VT3BOMA1

Overview

The FS10R12VT3BOMA1 is a silicon IGBT module manufactured by Infineon Technologies. It features a six-pack configuration with an N-channel topology. The device supports a maximum collector-emitter voltage of 1.2 kV and delivers a continuous collector current of 16 A at 25°C. Operating temperatures range from -40°C to +150°C. The component utilizes standard Si technology and is housed in a tray package, weighing approximately 10 g.

Feature Summary

• Six-pack IGBT configuration for three-phase power conversion
• High thermal stability up to 150°C junction temperature
• Robust short-circuit capability inherent to the silicon design

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Switched-mode power supplies

Procurement Notes

Verify the specific ordering suffix BOMA1 against official Infineon documentation to confirm exact pinout and packaging specifications. Confirm availability status as older variants may be subject to End-of-Life notices or obsolescence warnings before finalizing procurement plans.

Selection Notes

Select this module for applications requiring 1.2 kV blocking voltage and moderate current handling around 16 A. Ensure the cooling solution accommodates the thermal resistance characteristics of the specific housing type. Verify gate drive requirements align with the switching speed capabilities of the silicon IGBT technology used.

Part Context

This part belongs to the broader family of Infineon IGBT modules designed for industrial power electronics. Similar parts in the series often share mechanical footprints but vary significantly in current ratings and voltage classes. Cross-referencing datasheets for adjacent models like the FS10R12YE3 is recommended for mechanical compatibility checks.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon replacement guides for verified alternatives.