FS13MR12W2M1HB70BPSA1

$179.18

Description：MOSFET 6N-CH 1200V 62.5A
Series：CoolSiC™

SKU:a6d1832c2a27 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

FS13MR12W2M1HB70BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 6N-CH 1200V 62.5A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FS13MR12W2M1HB70BPSA1

Description：MOSFET 6N-CH 1200V 62.5A
Series：CoolSiC™
Mfr：Infineon Technologies
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：6 N-Channel (3-Phase Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：62.5A (Tc)
Rds On (Max) @ Id, Vgs：11.7mOhm @ 62.5A, 18V
Vgs(th) (Max) @ Id：5.15V @ 28mA
Gate Charge (Qg) (Max) @ Vgs：200nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds：6050pF @ 800V
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FS13MR12W2M1HB70BPSA1

FS13MR12W2M1HB70BPSA1

FET, MOSFET Arrays Overview

The FS13MR12W2M1HB70BPSA1 is a CoolSiC MOSFET six-pack module from Infineon Technologies, utilizing silicon carbide technology. It features a 1200 V drain-source voltage rating and operates within a junction temperature range of -40°C to +175°C. The module employs press-fit installation for secure mounting. It belongs to the M1H series and is part of the EasyPACK CoolSiC product family, designed for high-performance power conversion applications requiring robust semiconductor switching capabilities.

FET, MOSFET Arrays Feature Summary

Utilizes silicon carbide (SiC) MOSFET technology for enhanced thermal performance and efficiency.
Configured as a six-pack module providing multiple independent switching channels in a single package.
Features press-fit termination style for reliable mechanical connection without soldering.
Rated for a maximum operating junction temperature of 175°C.

FET, MOSFET Arrays Applications

High-frequency power inverters
Industrial motor drives
Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix B70 against the manufacturer's current datasheet to confirm terminal configuration and pinout compatibility. Ensure that the press-fit mounting requirements align with the target PCB or busbar design specifications before procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a six-channel SiC configuration is required for high-voltage applications. Consider the 1200 V rating and 175°C thermal capability relative to system cooling constraints. Compare channel count and package dimensions against alternative half-bridge or four-pack modules to ensure optimal board space utilization.

FET, MOSFET Arrays Part Context

This module is part of Infineon's EasyPACK CoolSiC lineup, specifically the M1H series. It integrates multiple discrete SiC MOSFETs into a unified power module format. The designation indicates its position within the company's portfolio of silicon carbide power solutions aimed at improving energy density and switching speeds.