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Product Detailed Parameters
- Description：IGBT MOD 650V 150A 430W
- Series：EconoPACK™ 3
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：Trench Field Stop
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 150A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：150 A
- Power - Max：430 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：9.3 nF @ 25 V
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Overview
The FS150R07N3E4B11BOSA1 is a six-pack IGBT module utilizing Trench/Fieldstop IGBT4 technology and Emitter Controlled 4 diodes. It features PressFIT contact technology and an integrated NTC temperature sensor within the EconoPACK™3 housing. The collector-emitter voltage (VCES) is rated at 650 V, with a continuous DC collector current (IC nom) of 150 A at TC = 55°C and a repetitive peak collector current (ICRM) of 300 A. Total power dissipation (Ptot) reaches 430 W at TC = 25°C. The typical collector-emitter saturation voltage (VCE sat) is 1.55 V at Tvj = 25°C, rising to 1.95 V at Tvj = 150°C under IC = 150 A conditions.
Feature Summary
- High short-circuit capability with self-limiting short-circuit current characteristics
- Integrated NTC temperature sensor for thermal monitoring
- Copper base plate construction for efficient heat dissipation
- PressFIT connection technology ensuring reliable electrical contact
Applications
- Motor drives
- Industrial inverters
- Power conversion systems
Procurement Notes
Verify component authenticity by cross-referencing the module label code against official Infineon documentation. Confirm that the specific ordering suffix matches the required technical specifications. Ensure compliance with RoHS directives and check for any relevant REACH SVHC declarations prior to integration into final assemblies.
Selection Notes
Evaluate thermal resistance parameters carefully, considering both junction-to-case and case-to-heatsink values based on the chosen interface material. Verify gate drive requirements against the specified internal gate resistor and threshold voltages. Ensure the operating temperature range aligns with the maximum junction temperature limits defined in the datasheet.
Part Context
This component belongs to the EconoPACK™3 series from Infineon Technologies, designed for industrial power applications. It integrates Trench/Fieldstop IGBT4 technology with Emitter Controlled 4 diodes, offering improved switching performance and robustness compared to previous generations within the same package footprint.
Replacement Considerations
FS150R07N3E4_B11
FAQ
What is the maximum repetitive peak reverse voltage for the integrated diode?
The maximum repetitive peak reverse voltage (VRRM) for the integrated diode is 650 V at a junction temperature of 25°C.
How does the collector-emitter saturation voltage vary with temperature?
At IC = 150 A and VGE = 15 V, VCE sat is typically 1.55 V at Tvj = 25°C, 1.70 V at Tvj = 125°C, and 1.95 V at Tvj = 150°C.
What is the nominal resistance of the integrated NTC thermistor?
The rated resistance (R25) of the integrated NTC thermistor is 5.00 kΩ at a case temperature of 25°C.
