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The FS150R12KT4PB11BPSA1 is a Trench/Fieldstop IGBT4 module with an emitter-controlled diode in the EconoPACK3 package. It features a 1200 V collector-emitter voltage and a continuous DC collector current of 150 A at TC=90°C. The saturation voltage is typically 1.75 V at Tvj=25°C. Total power dissipation reaches 750 W at TC=25°C. Operating junction temperature ranges from -40°C to 150°C. The module includes an integrated NTC thermistor rated at 5 kΩ at 25°C for thermal monitoring.
Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration details. Ensure compatibility with existing cooling systems, as thermal resistance values depend on interface materials. Confirm RoHS compliance status through the manufacturer's certificate before finalizing procurement orders.
Select this component based on its 150 A continuous current rating and 1200 V blocking capability. Evaluate the total power dissipation limits relative to the expected ambient and case temperatures. Consider the internal gate resistance and switching energy losses when designing the driver circuitry for optimal efficiency.
This part belongs to the FS150R12 series within Infineon's IGBT module portfolio. It utilizes the EconoPACK3 form factor, which is widely adopted in industrial power electronics. The Trenchstop IGBT4 generation provides a balance between low conduction losses and manageable switching speeds.
Consult official Infineon cross-reference lists for verified substitutes. Ensure any replacement matches the pinout, thermal characteristics, and electrical ratings of the original EconoPACK3 module.
The maximum repetitive peak collector current is 300 A for a pulse duration of 1 ms.
Yes, the datasheet specifies short-circuit data, indicating a withstand capability of up to 600 A for pulses less than or equal to 10 µs at a junction temperature of 150°C.
The isolation test voltage is 2.5 kV RMS at 50 Hz for one minute.