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The FS200R12PT4BOSA1 is a six-pack IGBT module from Infineon's TRENCHSTOP EconoPACK PressFIT series. It features fast Trench/Fieldstop IGBT4 technology and Emitter Controlled 4 diodes with an integrated NTC thermistor. The collector-emitter voltage (VCES) is 1200 V, with a continuous DC collector current of 200 A at 95°C case temperature. The typical collector-emitter saturation voltage (VCEsat) is 1.75 V at 25°C junction temperature. Total power dissipation reaches 1000 W at 25°C. The module supports an extended operating junction temperature range from -40°C to 150°C.
Verify the specific ordering suffix BOSA1 against official documentation to confirm exact manufacturing specifications. Ensure that the component matches the required technical parameters for your application before procurement. Cross-reference datasheet revision numbers to guarantee compatibility with existing designs.
Select this module for applications requiring high power density and robust thermal performance. Consider the 200 A continuous current rating and 1200 V blocking capability when designing the circuit. Evaluate the thermal resistance values to ensure adequate heatsinking for the intended duty cycle and ambient conditions.
This component belongs to the TRENCHSTOP IGBT4 family within the EconoPACK PressFIT product line. It represents a generation of modules optimized for efficiency and reliability in industrial power electronics. The series is characterized by advanced semiconductor structures that minimize conduction and switching losses.
Consult official replacement lists for verified substitutes. Do not assume cross-compatibility with other packaging styles or voltage ratings without explicit manufacturer confirmation.
The maximum repetitive peak collector current (ICRM) is 400 A for a pulse duration of 1 ms.
Yes, the module can withstand a short-circuit current of 800 A for up to 10 µs at a junction temperature of 150°C.
The rated resistance (R25) of the NTC thermistor is 5.00 kΩ at a case temperature of 25°C.