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Product Detailed Parameters
- Description：IGBT MOD 1200V 350A 1250W
- Series：EconoPACK™+
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：Trench Field Stop
- Configuration：Full Bridge Inverter
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 225A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：350 A
- Power - Max：1250 W
- Current - Collector Cutoff (Max)：3 mA
- Input Capacitance (Cies) @ Vce：13 nF @ 25 V
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Overview
The FS225R12OE4BOSA1 is a six-pack IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled HE diode. It features PressFIT connection technology and an integrated NTC temperature sensor within the EconoPACK+ package. The collector-emitter voltage (VCES) is rated at 1200 V, with a nominal continuous DC collector current of 225 A at TC = 100°C and a repetitive peak collector current of 450 A. Total power dissipation reaches 1250 W at TC = 25°C. The operating junction temperature range spans from -40°C to +150°C.
Feature Summary
- High short-circuit capability with self-limiting short circuit current
- Integrated NTC temperature sensor for reliable thermal monitoring
- PressFIT contact technology ensuring high mechanical robustness
- Isolated base plate design for enhanced safety
Applications
- Elevator systems
- High-power converters
- Commercial agriculture vehicles
- Motor drives
- Solar applications
- UPS systems
Procurement Notes
Verify the specific ordering suffix BOSA1 against official documentation to confirm compliance requirements and material specifications. Ensure that the intended application environment aligns with the specified thermal resistance values and mounting torque guidelines provided in the datasheet. Confirm compatibility with PressFIT assembly processes before procurement.
Selection Notes
Select this module for applications requiring high surge current capability and robust short-circuit withstand times up to 10 µs. Consider the low stray inductance of 20 nH for efficient switching performance. Evaluate the thermal management strategy based on the junction-to-case thermal resistance of 0.12 K/W per IGBT and 0.17 K/W per diode to maintain safe operating temperatures.
Part Context
This component belongs to the EconoPACK+ series featuring Trench/Fieldstop IGBT4 technology. It represents a generation of modules designed for high power density and efficiency in industrial power electronics. The integration of PressFIT technology distinguishes it from traditional screw-mounted alternatives, offering improved reliability under thermal cycling conditions.
Replacement Considerations
FS225R12KE3
FAQ
What is the maximum short-circuit time the module can withstand?
The module supports a short-circuit time of up to 10 µs at Tvj = 150°C with a short-circuit current of 900 A.
How does the PressFIT technology benefit the module?
PressFIT contact technology provides high mechanical robustness and ensures reliable electrical connections without the need for screws, reducing assembly complexity and improving resistance to thermal cycling.
What is the typical forward voltage of the integrated diode?
The typical forward voltage (VF) of the diode is 1.65 V at Tvj = 25°C and IF = 225 A, increasing to 2.10 V at Tvj = 150°C.
