FS225R17KE3BOSA1

Overview

The FS225R17KE3BOSA1 is a three-phase IGBT module from Infineon's EconoPACK+ series, utilizing Trench/Fieldstop IGBT³ technology and Emitter Controlled³ diodes. It features a collector-emitter voltage of 1700 V, a continuous DC collector current of 225 A at 80°C case temperature, and a repetitive peak collector current of 450 A. The module integrates an NTC thermistor with a nominal resistance of 5 kΩ at 25°C. Key electrical parameters include a maximum total power dissipation of 1400 W at 25°C, a gate-emitter peak voltage of ±20 V, and a typical collector-emitter saturation voltage of 2.45 V at 225 A. Thermal characteristics specify a junction-to-case thermal resistance of 0.09 K/W per IGBT and 0.16 K/W per diode.

Feature Summary

• Integrates Trench/Fieldstop IGBT³ technology for optimized switching performance.
• Incorporates Emitter Controlled³ diodes to manage reverse recovery characteristics.
• Includes an integrated NTC thermistor for precise junction temperature monitoring.
• Features a copper baseplate for efficient heat dissipation.

Applications

• Three-phase inverter systems
• Industrial motor drives
• Medium-power renewable energy converters

Procurement Notes

Verify the specific ordering suffix BOSA1 against official documentation to confirm exact manufacturing lot or revision details. Confirm RoHS compliance status and check for any Not Recommended for New Design (NRND) notices before finalizing procurement plans. Ensure supply chain sources provide valid traceability documents matching the manufacturer's specifications.

Selection Notes

Evaluate the module based on the required blocking voltage of 1700 V and the continuous current rating of 225 A under specified cooling conditions. Consider the internal gate resistance of 2.8 Ω and external gate resistor requirements for switching speed optimization. Verify that the application's stray inductance remains within limits to prevent overvoltage spikes during turn-off transitions.

Part Context

This component belongs to Infineon's EconoPACK+ family, designed for high-density power applications. It represents the Trenchstop IGBT³ generation, offering improved efficiency compared to previous planar technologies. The module is engineered for industrial environments requiring robust thermal management and reliable operation under high current loads.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing should be performed using official Infineon selection tools to identify modules with compatible voltage, current, and package dimensions.

FAQ

What is the maximum short-circuit withstand time for this module?

The module supports a short-circuit time of up to 10 µs when the gate-emitter voltage is less than or equal to 15 V and the collector-emitter voltage is 1000 V.

How does the junction temperature affect the forward voltage of the diode?

The forward voltage decreases as the junction temperature increases; it is typically 1.80 V at 25°C and drops to 1.90 V at 125°C under a forward current of 225 A.

What is the isolation test voltage rating?

The module has an isolation test voltage rating of 3.4 kV RMS at 50 Hz for one minute between terminals and heatsink.