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The FS300R12KE3BOSA1 is a three-phase inverter module from Infineon's EconoPACK+ series, integrating Trench/Feldstop IGBT3 and Emitter Controlled High Efficiency diodes. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 300 A at 80°C case temperature. The module includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25°C. Key electrical parameters include a typical saturation voltage of 1.70 V at 25°C and a gate charge of 2.70 µC. Thermal performance is characterized by a junction-to-case thermal resistance of 0.085 K/W for the IGBT and 0.15 K/W for the diode.
Verify the specific ordering suffix BOSA1 against official documentation to confirm package variant and reel specifications. Ensure compatibility with existing PCB layouts and cooling requirements before procurement. Cross-reference the datasheet revision date to confirm technical data accuracy.
Select this module based on the required 1200 V blocking voltage and 300 A continuous current capability. Evaluate thermal resistance values against the system's heatsink design to ensure junction temperatures remain within the -40°C to 125°C operating range. Consider the internal gate resistor value when designing the gate driver circuitry.
This component belongs to Infineon's EconoPACK+ family, designed for high-power density applications. The FS300R12KE3 variant specifically combines robust IGBT3 technology with efficient freewheeling diodes. The BOSA1 suffix typically denotes a specific tape-and-reel packaging option for automated assembly processes.
Check for direct replacements within the same EconoPACK+ series with identical pinouts and thermal characteristics. Verify that any substitute part maintains compatible voltage ratings and current capabilities for the specific application requirements.
The maximum repetitive peak reverse voltage (VRRM) for the diode is 1200 V at a junction temperature of 25°C.
The isolation test voltage (VISOL) is 2.5 kV RMS at 50 Hz for a duration of 1 minute.
The typical gate threshold voltage (VGEth) is 5.8 V, measured at a collector current of 12.0 mA and a junction temperature of 25°C.