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Product Detailed Parameters
- Description：LOW POWER ECONO AG-ECONO2B-311
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Full Bridge Inverter
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 35A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-ECONO2B
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：55 A
- Power - Max：200 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：2.5 nF @ 25 V
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Overview
The FS35R12KE3GBPSA1 is a full-bridge inverter IGBT module manufactured by Infineon Technologies. It features a 1200 V collector-emitter voltage rating and supports a continuous DC collector current of 55 A, with a nominal current of 35 A. The maximum power dissipation is 200 W at a case temperature of 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.7 V at 35 A and 25°C, and an input capacitance of 2.5 nF. The device operates within a junction temperature range of -40°C to 125°C.
Feature Summary
- Full-bridge inverter configuration integrating four switching elements
- Integrated NTC thermistor for precise thermal monitoring
- High short-circuit capability up to 140 A for robust fault protection
Applications
- Industrial motor drives and servo systems
- Uninterruptible power supplies (UPS)
- Welding equipment and power converters
Procurement Notes
Verify the component against official datasheets to confirm technical specifications and compliance status. Ensure that the ordering suffix matches the required package and terminal configuration. Cross-reference part numbers with authorized distributors to validate authenticity and traceability before finalizing procurement orders.
Selection Notes
Select this module based on its 1200 V blocking voltage and 55 A continuous current capacity. Evaluate the thermal resistance characteristics to ensure adequate heatsinking for the specified 200 W power dissipation. Confirm that the gate drive requirements align with the standard ±15 V operating voltage for optimal switching performance.
Part Context
This component belongs to the FS35R12 series of IGBT modules from Infineon Technologies. It utilizes Trenchstop technology to optimize switching losses and conduction characteristics. The module is designed for high-efficiency power conversion applications requiring reliable operation under demanding electrical conditions.
Replacement Considerations
Direct substitutes are not explicitly confirmed in public documentation. Verify compatibility with alternative models such as the FS35R12KE3BPSA1 or similar variants by comparing pinouts, thermal resistance, and electrical ratings.
