FS3L50R07W2H3FB11BPSA1

Overview

The FS3L50R07W2H3FB11BPSA1 is a 650 V, 50 A three-level IGBT module from Infineon Technologies. It utilizes TRENCHSTOP™ 7 technology and features thinQ! H SiC Schottky diodes. The device is housed in an EasyPACK™ S package with screw mounting. Key electrical parameters include a collector-emitter saturation voltage of 1.45 V at 25°C and a continuous collector current of 50 A. The operating junction temperature range spans from -40°C to +150°C.

Feature Summary

• Integrates thinQ! H SiC Schottky diodes for improved switching performance
• Employs TRENCHSTOP™ 7 trench field-stop technology for enhanced controllability
• Features integrated NTC thermistor for reliable thermal monitoring

Applications

• Industrial motor drives
• Uninterruptible power supply systems
• Photovoltaic inverters

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and internal configuration. Ensure compatibility with existing gate driver requirements and thermal management solutions before integration into the design.

Selection Notes

Select this component for applications requiring high efficiency at moderate switching frequencies. The three-level topology reduces voltage stress on switches. Verify that the system can accommodate the specific thermal resistance characteristics of the EasyPACK™ S package.

Part Context

This part belongs to the EconoPACK™ 3 series utilizing TRENCHSTOP™ 7 technology. It represents a generation of modules designed to supersede previous TRENCHSTOP™ Performance and HighSpeed 3 technologies while offering superior short-circuit ruggedness.

Replacement Considerations

Consult official substitution guides for direct replacements. Previous generations such as TRENCHSTOP™ 5 or Performance series may require circuit adjustments due to differences in saturation voltage and switching characteristics.