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The FS450R12OE4_B81 is an EconoPACK+ module featuring Trench/Fieldstop IGBT4 and Emitter Controlled HE Diode technology. It provides a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (ICDC) of 450 A at TC = 95°C. The repetitive peak collector current (ICRM) reaches 900 A for 1 ms pulses. Key electrical parameters include a typical VCEsat of 1.76 V at Tvj = 25°C, gate threshold voltage (VGEth) of 5.80 V, and internal gate resistance (RGint) of 1.7 Ω. Thermal resistance from junction to case is 0.067 K/W per IGBT and 0.101 K/W per diode. The module includes an integrated NTC thermistor with a nominal resistance of 5.00 kΩ at 25°C.
Verify the exact ordering suffix B81 against official Infineon documentation to confirm specific packaging or variant details. Ensure compatibility with PressFIT mounting tools and verify that the isolated base plate design meets the insulation requirements of the target application circuit.
Select this component when a 1200 V rating and 450 A continuous current are required in a compact EconoPACK+ form factor. Consider the low stray inductance of 20 nH for high-speed switching applications. Evaluate the thermal resistance values to ensure adequate heatsinking for the intended duty cycle and ambient conditions.
This module belongs to the EconoPACK+ series utilizing Trench/Fieldstop IGBT4 technology. It integrates an Emitter Controlled High Efficiency diode to optimize switching losses. The design emphasizes mechanical robustness and H2S ruggedness for demanding industrial environments.
Consult official Infineon cross-reference guides for verified substitutes. Generic replacements may not match the specific PressFIT termination style or the precise thermal characteristics of the isolated base plate.
The maximum operating junction temperature (Tvj op) is 150°C.
The module utilizes PressFIT connection technology for its terminals.
The isolation test voltage (VISOL) is 2.5 kV RMS at 50 Hz for 1 minute.