FS45MR12W1M1B11BOMA1

FET, MOSFET Arrays Overview

The FS45MR12W1M1B11BOMA1 is a CoolSiC MOSFET half-bridge module manufactured by Infineon Technologies. It utilizes Silicon Carbide (SiC) technology and features an N-channel configuration with a drain-source breakdown voltage of 1.2 kV. The module provides a continuous drain current of 25 A at the case temperature, with a maximum on-state resistance of 38 mOhms. It employs PressFIT contact technology for mounting and includes an integrated negative temperature coefficient (NTC) temperature sensor. The device operates within a junction temperature range of -40°C to +175°C.

FET, MOSFET Arrays Feature Summary

• Utilizes silicon carbide (SiC) technology for high-performance power conversion
• Integrates PressFIT contact technology for secure mechanical and electrical connection
• Includes an embedded negative temperature coefficient (NTC) temperature sensor for thermal monitoring

FET, MOSFET Arrays Applications

• High-efficiency DC/DC converters
• On-board chargers for electric vehicles
• Traction inverters in automotive applications

FET, MOSFET Arrays Procurement Notes

This component is scheduled for obsolescence and will be discontinued by the manufacturer. Verify end-of-life status and availability through official channels before finalizing designs. Ensure compliance with RoHS directives as indicated in product documentation. Confirm that alternative components meet all required electrical and thermal specifications for your specific application.

FET, MOSFET Arrays Selection Notes

Select this module when high switching frequencies and low conduction losses are critical. The integrated NTC sensor simplifies thermal management compared to discrete solutions. Consider the 1.2 kV rating and 25 A current capacity against system requirements. Evaluate the PressFIT mounting method for assembly compatibility. Review datasheet parameters for switching times and thermal resistance to ensure adequate heat sinking.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's EasyPACK family of power modules, designed for compact and efficient power electronics. It is specifically categorized under CoolSiC trench gate MOSFET modules, which leverage silicon carbide material properties for superior performance over traditional silicon devices. The BOMA1 suffix indicates specific packaging and configuration details within the series.

FET, MOSFET Arrays Replacement Considerations

Due to the discontinuation notice, direct substitutes must be sourced from Infineon's current CoolSiC portfolio. Verify pinout compatibility and thermal interface requirements when selecting alternatives. Cross-reference electrical parameters such as Vds, Id, and Rds(on) to ensure equivalent performance in the target circuit.