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Product Detailed Parameters
- Description：IGBT MODULES
- Series：EasyPACK™
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：70 A
- Power - Max：205 W
- Current - Collector Cutoff (Max)：50 µA
- Input Capacitance (Cies) @ Vce：3.1 nF @ 25 V
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Overview
The FS50R07W1E3B11ABOMA1 is a 650 V, 70 A IGBT module from Infineon's Trenchstop IGBT3 - E3 series. It utilizes silicon technology and features an EasyPIM package configuration. The module operates within a temperature range of -40 °C to +150 °C, with a power dissipation rating of 205 W.
Feature Summary
- Incorporates Trenchstop IGBT3 - E3 technology for optimized switching performance.
- Designed in a compact EasyPIM module format for efficient integration.
Applications
- Industrial motor drives
- Power conversion systems
Procurement Notes
Verify the specific ordering suffix B11A against official Infineon documentation to confirm exact pinout and terminal configuration. Ensure compatibility with existing thermal management solutions and gate driver requirements before procurement.
Selection Notes
Select this component for applications requiring 650 V blocking capability and 70 A continuous current handling. Consider the 205 W power dissipation limit and operating temperature range when designing the thermal interface and heatsink system.
Part Context
This part belongs to the Trenchstop IGBT3 - E3 product family, which combines low conduction losses with robust short-circuit withstand capability. The EasyPIM packaging provides a standardized mechanical footprint for modular power electronics designs.
Replacement Considerations
Consult official cross-reference lists for direct substitutes. Verify voltage, current, and saturation voltage parameters match application requirements before substituting with alternative IGBT modules.
