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Product Detailed Parameters
- Description：IGBT MOD 1200V 75A 270W
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk,Bulk
- IGBT Type：NPT
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：75 A
- Power - Max：270 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：3.5 nF @ 25 V
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Overview
The FS50R12KE3BOSA1 is a six-pack IGBT module manufactured by Infineon Technologies. It integrates three N-channel TRENCHSTOP™ IGBTs and three anti-parallel fast recovery diodes within a single EconoPACK™ housing. The device supports a maximum collector-emitter voltage of 1200 V and a continuous DC collector current of 50 A at 25°C, with a repetitive peak current capability of 75 A. Total power dissipation is rated at 270 W. Key electrical characteristics include a typical saturation voltage of 1.7 V at 50 A and 25°C, and a gate threshold voltage of 2.0 V. The module incorporates an integrated NTC thermistor for thermal monitoring.
Feature Summary
- Integrates three independent IGBT switches and three complementary fast recovery diodes in a single package
- Utilizes TRENCHSTOP™ technology to optimize switching performance and conduction losses
- Includes an embedded NTC thermistor for precise junction temperature monitoring
- Designed for robust operation with high short-circuit withstand capability
Applications
- Industrial motor drives and frequency converters
- Uninterruptible power supply (UPS) systems
- High-frequency welding inverters
Procurement Notes
Verify the specific ordering suffix BOSA1 against official documentation to confirm packaging details and environmental compliance status. Ensure that the component matches the required pin configuration and mounting specifications for the target application before finalizing procurement orders.
Selection Notes
Select this module for applications requiring a compact six-pack topology with 1200 V blocking capability. Evaluate the thermal resistance parameters and ensure adequate heatsinking to maintain junction temperatures within the specified -40°C to +125°C operating range during continuous duty cycles.
Part Context
This component belongs to the FS50R12KE3 series of industrial IGBT modules. It represents a generation of power semiconductors designed for medium-power conversion tasks, offering a balance between switching speed and conduction efficiency suitable for demanding industrial environments.
Replacement Considerations
Direct substitutes include the FS50R12KT3BOSA1. Verify compatibility regarding packaging dimensions, pinout assignments, and specific electrical tolerances before implementing any cross-references in existing designs.
FAQ
What is the maximum short-circuit withstand time for this module?
The module supports a short-circuit time of up to 10 µs under specified conditions.
Does the module include built-in thermal protection components?
Yes, it features an integrated NTC thermistor for accurate temperature sensing.
What is the typical forward voltage of the integrated diodes?
The typical forward voltage is approximately 1.65 V at 50 A and 25°C.
