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The FS50R12KT4PB11BPSA1 is a six-pack IGBT module from the Trenchstop IGBT4 series, utilizing Emitter Controlled 4 diode technology. It features PressFIT contact and an integrated NTC sensor. Key electrical parameters include a collector-emitter voltage (VCES) of 1200 V, a continuous DC collector current (IC nom) of 50 A at TH = 85°C, and a repetitive peak collector current (ICRM) of 100 A. The typical collector-emitter saturation voltage (VCEsat) is 2.15 V at Tvj = 125°C. Switching losses at IC = 50 A and VCE = 600 V show turn-on energy (Eon) of 6.4 mJ and turn-off energy (Eoff) of 4.1 mJ at Tvj = 125°C. Thermal resistance from junction to heatsink (RthJH) is 0.671 K/W per IGBT.
Verify component authenticity by cross-referencing the barcode and DMX codes printed on the module label against official Infineon databases. Confirm that the ordering suffix B11 matches the specific variant requirements. Ensure compliance with RoHS directives and check for any applicable export control classifications before finalizing procurement orders.
Select this module for applications requiring robust thermal cycling capability and low conduction losses. The 1200 V rating supports standard industrial bus voltages. Verify that the system's maximum operating junction temperature does not exceed 150°C under switching conditions. Ensure the gate drive circuit provides the specified ±15 V swing for optimal performance.
This component belongs to the EconoPACK™2 family, designed for compact power conversion systems. It integrates Trenchstop IGBT4 chips with Emitter Controlled 4 diodes to minimize switching losses. The module utilizes an Al2O3 substrate for high insulation strength and efficient heat dissipation through the copper base plate.
Direct replacements within the same series include the FS50R12KT4P_B11. When substituting, verify that the mechanical footprint, terminal configuration, and thermal characteristics remain identical to ensure compatibility with existing cooling solutions and PCB layouts.