FS50R17KE3B17BOSA1

Description：IGBT MOD 1700V 82A 345W
Series：EconoPACK™ 2

SKU:fceb874bb218 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 1700V 82A 345W
Series：EconoPACK™ 2
Mfr：Infineon Technologies
Package：Tray
IGBT Type：Trench Field Stop
Configuration：Full Bridge
Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 50A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 125°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1700 V
Current - Collector (Ic) (Max)：82 A
Power - Max：345 W
Current - Collector Cutoff (Max)：1 mA
Input Capacitance (Cies) @ Vce：4.5 nF @ 25 V

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FS50R17KE3B17BOSA1

Overview

The FS50R17KE3B17BOSA1 is a six-pack IGBT module from Infineon's EconoPACK™2 series, utilizing Trench/Fieldstop IGBT3 and Emitter Controlled Diode 3 technology. It features a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (IC nom) of 50 A at TC = 80°C. The device exhibits a typical VCEsat of 2.0 V at Tvj = 25°C and supports a repetitive peak collector current (ICRM) of 100 A. Total power dissipation reaches 345 W at TC = 25°C. Thermal resistance from junction to case is 0.36 K/W per IGBT and 0.63 K/W per diode.

Feature Summary

High short-circuit capability with self-limiting short-circuit current
Low switching losses for improved efficiency
Positive temperature coefficient for VCEsat ensuring safe parallel operation
Copper base plate for effective thermal management

Applications

Auxiliary inverters
Motor drives

Procurement Notes

Verify the specific ordering suffix BOSA1 against official documentation to confirm exact manufacturing lot or revision details. Confirm RoHS compliance status through the manufacturer's latest environmental declarations. Ensure the component matches the required insulation class and mounting torque specifications for your application design.

Selection Notes

Select this module for applications requiring high voltage blocking up to 1700 V and moderate current handling around 50 A. Consider the thermal resistance values when designing heatsink solutions. Verify that the gate drive circuitry can accommodate the specified internal gate resistor and charge requirements for optimal switching performance.

Part Context

This component belongs to the IGBT3 - E3 product family within Infineon's portfolio. It utilizes silicon technology and is housed in the standard EconoPACK™2 package. The module is designed for industrial quality standards and integrates both IGBT switches and freewheeling diodes in a single six-pack configuration.