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The FS75R06KE3BOSA1 is a six-pack IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT³ technology and an Emitter Controlled³ diode. It features a collector-emitter voltage of 600 V and a continuous DC collector current of 75 A at 70°C case temperature. The module includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.90 V at 150°C and a total power dissipation of 250 W. The junction-to-case thermal resistance is 0.60 K/W for the IGBT and 0.95 K/W for the diode.
Verify the specific ordering suffix BOSA1 against official documentation to confirm exact manufacturing lot details and compliance status. Ensure that the component matches the required technical specifications for your application before procurement. Cross-reference the datasheet revision to confirm all electrical characteristics align with your design requirements.
Select this module for applications requiring robust 600 V switching capabilities and high current density in a compact form factor. Consider the thermal resistance values when designing the heatsink interface to maintain junction temperatures within the specified operational range. Evaluate the gate charge and switching energy losses to optimize driver circuit performance and overall system efficiency.
This component belongs to the EconoPACK™ series of industrial IGBT modules. It represents a generation of power electronics designed for high reliability and efficiency in medium-power conversion tasks. The integration of advanced trench technology allows for reduced switching losses compared to older planar designs.
Public confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing PCB layouts and mounting hardware if considering alternative packages or voltage ratings from other manufacturers.
The maximum operating junction temperature under switching conditions is 150°C.
Yes, the module contains an NTC thermistor with a rated resistance of 5.00 kΩ at 25°C.
The module stray inductance (LsCE) is specified as 19 nH.