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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FS75R07N2E4B11BOSA1 is a Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode module in the EconoPACK™2 housing. It features PressFIT connection technology and an integrated NTC temperature sensor. The collector-emitter voltage (VCES) is 650 V, with a continuous DC collector current (IC nom) of 75 A at TC = 70°C and a repetitive peak collector current (ICRM) of 150 A. The typical collector-emitter saturation voltage (VCE sat) is 1.55 V at Tvj = 25°C. Total power dissipation (Ptot) is 250 W at TC = 25°C. The operating junction temperature range is -40°C to 150°C.
Verify the exact ordering suffix against official Infineon documentation to confirm mechanical and electrical specifications. Confirm compliance with RoHS and REACH regulations before procurement. Ensure that the PressFIT termination type matches the target PCB design requirements. Validate the component's availability status as manufacturing lifecycles may change.
Select this module for applications requiring a 650 V rating and 75 A continuous current capacity. Consider the 150 A repetitive peak current limit for transient load conditions. Evaluate the thermal resistance values to ensure adequate heatsinking for the specified power dissipation. Verify that the system can accommodate the PressFIT mounting method rather than traditional soldering.
This component belongs to the Infineon Trenchstop IGBT4 series utilizing Emitter Controlled 4 diode technology. It is housed in the standard EconoPACK™2 package designed for industrial power electronics. The module integrates both the IGBT switch and the anti-parallel diode on a copper base plate.
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement maintains the same voltage, current, and thermal ratings. Verify compatibility with existing PressFIT tooling and PCB layouts when considering alternative part numbers.