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Product Detailed Parameters
- Description：IGBT MOD 1200V 105A 355W
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：Trench Field Stop
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 75A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：105 A
- Power - Max：355 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：5.3 nF @ 25 V
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Overview
The FS75R12KE3B9BOSA1 is a silicon IGBT module from Infineon Technologies, belonging to the Trenchstop IGBT3 series. It features a six-pack configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 105 A at 25°C. The typical collector-emitter saturation voltage is 1.7 V, while the gate-emitter leakage current is specified at 100 nA. The module has a power dissipation rating of 355 W and operates within a junction temperature range of -40°C to +125°C. It utilizes screw mount installation and is packaged in trays.
Feature Summary
- Six-pack topology integrating multiple switching elements for compact power conversion designs
- Trenchstop IGBT3 technology providing optimized switching performance and low conduction losses
- Industrial quality grade suitable for demanding thermal and electrical environments
Applications
- Induction heating systems
- Uninterruptible power supplies (UPS)
- Motor drive applications
Procurement Notes
Verify the complete part number including the B9BPSA1 suffix against official Infineon documentation to ensure correct revision and compliance status. Confirm that the required datasheet version matches the specific manufacturing batch requirements for your design validation process before finalizing procurement orders.
Selection Notes
Select this component when a six-pack IGBT configuration is required with a 1.2 kV blocking voltage and high current handling capability. Ensure the thermal management system supports the 355 W power dissipation rating and that the operating junction temperature remains within the specified -40°C to +125°C range for reliable long-term operation.
Part Context
This module is part of the broader Infineon IGBT portfolio, specifically utilizing the Trenchstop IGBT3 generation technology. It shares the six-pack form factor with other models in the FS75R12 series but differs in specific electrical characteristics and packaging details compared to variants like the FS75R12KT4 or FP75R12KE3.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative modules such as the FS75R12KE3 or FS75R12KT4 only if their datasheets confirm identical pinout and electrical specifications.
