SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FS75R12KE3BPSA1 is an IGBT module featuring a 1200 V collector-emitter voltage rating and a continuous collector current of 75 A at Tc=80°C. It integrates a fast recovery anti-parallel diode with a repetitive peak forward current of 150 A. The device exhibits a typical collector-emitter saturation voltage of 1.7 V at 75 A and 25°C, rising to 2.15 V at 125°C. Switching characteristics include a turn-on delay of 0.26 µs and a fall time of 0.03 µs at 600 V. Thermal management relies on a junction-to-case resistance of 0.35 K/W, supporting a maximum junction temperature of 150°C.
Verify the specific ordering suffix BPSA1 against the manufacturer's current datasheet revision to confirm pinout compatibility and packaging details. Ensure the component matches the original design specifications before integration into production assemblies.
Select this module for applications requiring 1200 V blocking voltage and 75 A continuous current. Evaluate the thermal resistance of 0.35 K/W against the heatsink design to maintain junction temperatures below 150°C under expected load conditions.
This component belongs to the FS75R12KE3 series of IGBT modules manufactured by Infineon Technologies. The product line is designed for medium-power switching applications, combining low conduction losses with fast switching speeds suitable for industrial power electronics.
Consult official substitution guides for compatible IGBT modules with matching voltage and current ratings. Verify mechanical dimensions and thermal characteristics before replacing the existing component in the assembly.