SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FS800R07A2E3BOSA2 is a HybridPACK 2 IGBT module manufactured by Infineon Technologies. It utilizes Trench IGBT3 technology and features a six-pack configuration with an integrated diode. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 800 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.4 V, a gate-emitter leakage current of 400 nA, and a power dissipation rating of 1.55 kW. The module operates within a temperature range of -40°C to +150°C and uses the HybridPack2 package.
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm RoHS compliance status and check for end-of-life notifications prior to procurement. Ensure supply chain integrity to avoid counterfeit components.
Select this module for applications requiring high power density and efficient thermal management via direct liquid cooling. Verify that the system design accommodates the 650 V blocking voltage and 800 A current ratings. Ensure compatibility with the HybridPack2 mounting requirements and thermal interface materials.
This component belongs to the Infineon HybridPACK 2 series, designed specifically for automotive traction applications. It represents a high-power density solution utilizing advanced semiconductor technologies to optimize efficiency and reliability in electric vehicle powertrains.
FS800R07A2E3_B31
The maximum continuous operating junction temperature is 150°C.
Yes, the HybridPACK 2 package features a PinFin structure designed for direct liquid cooling.
The module utilizes Trench IGBT3 technology.