FX504-TL-E

Single Bipolar Transistors Overview

The FX504-TL-E is a small signal NPN silicon bipolar junction transistor manufactured by onsemi. It features a collector current rating of 3 A and a collector-emitter breakdown voltage of 50 V. The device is housed in a surface-mount SOT-23 package, specifically designated as SC-59 or SOT-23. It is designed for general-purpose switching applications with a minimum DC current gain (hFE) of 140.

Single Bipolar Transistors Feature Summary

• NPN silicon construction optimized for low-voltage switching
• High collector current capability of 3 A
• Surface-mount packaging for automated assembly

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Low-voltage logic interface stages
• Signal amplification in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify the exact datasheet revision and electrical characteristics against the official onsemi documentation for part number FX504-TL-E. Confirm that the package marking and pinout align with standard SOT-23/SC-59 specifications before integration into production designs.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN transistor with 3 A continuous collector current and 50 V breakdown voltage is required in a compact surface-mount form factor. Ensure the application operates within the specified thermal limits and voltage ratings defined in the manufacturer's datasheet.

Single Bipolar Transistors Part Context

This part belongs to the family of small-signal bipolar transistors from onsemi. It serves as a discrete semiconductor solution for power control and signal processing tasks where high current density in a small footprint is necessary. The device complements other NPN types in the portfolio offering similar electrical performance profiles.

Single Bipolar Transistors Replacement Considerations

Cross-reference with equivalent NPN transistors in the SOT-23 package featuring comparable Vceo and Ic ratings. Verify pin compatibility and thermal resistance values to ensure direct substitution without circuit modification.