FZ1000R45KL3B5NPSA1

Overview

The FZ1000R45KL3B5NPSA1 is a highly insulated single-switch IGBT module utilizing Trench/Fieldstop IGBT3 technology. It features an AlSiC base plate and isolated base design for enhanced thermal cycling capability. Key electrical parameters include a collector-emitter voltage (VCES) of 4500 V, a continuous DC collector current (ICDC) of 1000 A at TC=80°C, and a repetitive peak current (ICRM) of 2000 A. The saturation voltage (VCE,sat) ranges from 2.70 V to 3.85 V depending on temperature. Thermal resistance from junction to case is 11.1 K/kW for the IGBT and 25.5 K/kW for the diode. The module supports a maximum operating junction temperature of 150°C and has been validated for industrial applications.

Feature Summary

• Highly insulated package with isolated base plate and high creepage/clearance distances
• AlSiC base plate construction for increased thermal cycling robustness
• Trench/Fieldstop IGBT3 technology providing low saturation voltage and positive temperature coefficient
• High short-circuit capability and dynamic robustness

Applications

• Motor drives
• Traction drives
• Multi-level inverters
• High-power converters
• Medium-voltage converters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct configuration. Confirm that the component meets all relevant industrial qualification standards required for the target application environment before finalizing procurement orders.

Selection Notes

Select this module for high-power applications requiring 4500 V blocking capability and 1000 A continuous current handling. Ensure the cooling system can maintain the case temperature within limits to support the specified 150°C junction temperature operation. Verify gate drive requirements align with the ±20 V gate-emitter voltage rating.

Part Context

This component belongs to Infineon's FZ series of highly insulated modules. It utilizes silicon technology and is designed for demanding industrial power electronics environments. The module integrates a single IGBT switch and an emitter-controlled diode in one compact package.

Replacement Considerations

Consult official Infineon documentation for qualified substitute part numbers. Do not assume cross-compatibility with other series without verifying pinout, insulation coordination, and thermal characteristics.