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Product Detailed Parameters
- Description：IHV IHM T
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：3.25V @ 15V, 1kA
- Input：DC
- NTC Thermistor：No
- Operating Temperature：-50°C ~ 135°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：6500 V
- Current - Collector (Ic) (Max)：1 kA
- Power - Max：3600000 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：245000 pF @ 25 V
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Overview
The FZ1000R65KE4NPSA1 is a single IGBT module from Infineon Technologies, utilizing silicon technology within the Highly Insulated Modules (HIM) series. It features a maximum collector-emitter voltage of 6.5 kV and a continuous collector current of 1 kA at 25°C. The saturation voltage is specified at 3.25 V, with a power dissipation capacity of 3.6 MW. Operating temperatures range from -50°C to +135°C. The component measures 190 mm x 140 mm x 48 mm and employs screw mount installation.
Feature Summary
- High voltage capability up to 6.5 kV for demanding power applications
- Single switch configuration within the IHV HIM T package family
- Robust thermal performance supporting high power dissipation levels
Applications
- High-power industrial motor drives
- Traction inverter systems
- HVDC transmission equipment
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to ensure correct pinout and terminal configuration. Confirm that the requested quantity aligns with factory packaging standards. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.
Selection Notes
Select this module when system requirements demand a single switch topology with high voltage blocking capabilities exceeding standard industrial levels. Ensure the cooling infrastructure supports the specified 3.6 MW power dissipation. Verify that the mechanical mounting holes correspond to the 190 mm by 140 mm footprint dimensions provided in the datasheet.
Part Context
This component belongs to Infineon's High Voltage IGBT module portfolio, designed for extreme power handling. It represents a specialized solution within the KE4 generation, targeting applications where standard voltage ratings are insufficient. The module integrates advanced silicon technology to manage high currents in compact industrial form factors.
Replacement Considerations
Direct substitutes include the FZ1000R65KE4, which shares identical electrical characteristics and physical dimensions. Verify compatibility with existing gate drive circuits and thermal interface materials when transitioning between these variants.
