FZ1200R12KF4NOSA1

FZ1200R12KF4NOSA1

  • Description:IGBT MODULE 1200V 1200A
  • Series:IHM-B

SKU:b7ad1fa9b46a Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MODULE 1200V 1200A
  • Series:IHM-B
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:-
  • Configuration:Single Switch
  • Vce(on) (Max) @ Vge, Ic:3.2V @ 15V, 1.2kA
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):1200 A
  • Power - Max:7800 W
  • Current - Collector Cutoff (Max):16 mA
  • Input Capacitance (Cies) @ Vce:90 nF @ 25 V

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FZ1200R12KF4NOSA1

Overview

The FZ1200R12KF4NOSA1 is a high-power IGBT module manufactured by Infineon Technologies, utilizing the Trench/Fieldstop IGBT4 technology. It features a single switch configuration with a collector-emitter voltage of 1200 V and a continuous DC collector current of 1200 A at 25°C. The module incorporates an integrated inverse diode and operates within a junction temperature range up to 150°C. Key electrical characteristics include a typical collector-emitter saturation voltage of 2.7 V and a forward voltage of 2.2 V for the diode at 25°C. Total power dissipation reaches 7800 W, supported by a low thermal resistance of 0.016 °C/W from junction to case.

Feature Summary

  • Utilizes Trench/Fieldstop IGBT4 technology for optimized switching performance and low conduction losses.
  • Features a robust mechanical design with internal Al2O3 insulation and screw-type terminals for secure mounting.
  • Integrated inverse diode provides efficient freewheeling capability in half-bridge configurations.

Applications

  • High-power industrial motor drives
  • Medium-voltage variable frequency drives (VFDs)
  • Uninterruptible power supplies (UPS) systems

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and compliance status. Ensure that the component matches the required technical specifications for your application before procurement. Cross-reference datasheet revisions to confirm parameter consistency. Confirm RoHS compliance details through verified supplier channels.

Selection Notes

Select this module based on its 1200 V rating and 1200 A current capacity for high-power applications. Consider the thermal resistance and power dissipation limits when designing the heatsinking system. Evaluate the short-circuit withstand capability and gate drive requirements to ensure safe operation within the specified voltage and temperature ranges.

Part Context

This component belongs to the FZ series of high-power IGBT modules produced by Infineon Technologies. It is part of the Trench/Fieldstop IGBT4 product family, designed for demanding industrial applications requiring high efficiency and reliability. The module integrates both the IGBT and the anti-parallel diode in a single package.

Replacement Considerations

Direct replacements should be sought from the same Infineon FZ series or compatible IGBT4 family modules. Verify pinout compatibility and mechanical dimensions before substitution. Ensure that the replacement part meets or exceeds the original voltage, current, and thermal specifications.

FZ1200R12KF4NOSA1FZ1200R12KF4NOSA1

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