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Product Detailed Parameters
- Description：FZ1200R12K - IGBT MODULE
- Series：*
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The FZ1200R12KF5NOSA1 is a single-switch IGBT module from Infineon Technologies, rated for 1200 V collector-emitter voltage and 1200 A continuous collector current. It utilizes TRENCHSTOP™ IGBT5 technology with field-stop structure for optimized switching performance. The module features a low saturation voltage of approximately 2.3 V at rated conditions and operates within a junction temperature range of -40°C to +175°C. Packaged in the C-Series 62 mm form factor with screw mounting, it includes an integrated NTC thermistor for precise thermal monitoring.
Feature Summary
- Integrates TRENCHSTOP IGBT5 technology for enhanced efficiency and reduced switching losses compared to previous generations.
- Features a robust C-Series 62 mm module design optimized for high-power density applications and reliable thermal management.
- Includes an integrated negative temperature coefficient (NTC) thermistor for accurate real-time junction temperature monitoring.
Applications
- Industrial motor drives and inverters
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the complete ordering code including the 'NOSA1' suffix against official Infineon documentation to ensure correct package variant and pin configuration. Confirm that the specific revision matches the required application specifications, as suffixes may denote subtle manufacturing or packaging differences not visible in general part numbers.
Selection Notes
Select this component for applications requiring high current handling and efficient thermal dissipation in compact spaces. The 1200V rating suits medium-voltage industrial systems. Ensure gate drive circuits are compatible with the specified electrical characteristics and that heatsinking solutions support the maximum operating temperature limits defined in the datasheet.
Part Context
This module belongs to the FZ1200R series of single-switch IGBT modules designed by Infineon. It represents the evolution into the IGBT5 generation, offering improvements in switching speed and conduction losses over earlier TRENCHSTOP versions while maintaining the standard mechanical footprint for easy integration into existing designs.
Replacement Considerations
Direct replacements include FZ1200R12KE3 and FZ1200R12HE4P, though these belong to different technology generations (IGBT3/IGBT4) and exhibit distinct electrical characteristics. Verify compatibility regarding switching times, gate charge requirements, and thermal resistance before substitution.
