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Product Detailed Parameters
- Description：IGBT MODULE 1700V 1200A
- Series：IHM-B
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Single Switch
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 1.2kA
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：1900 A
- Power - Max：8950 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：110 nF @ 25 V
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Overview
The FZ1200R17KE3_B2 is a single IGBT module with an integrated anti-parallel diode, rated for 1700 V collector-emitter voltage and 1200 A continuous DC collector current. It utilizes Trenchstop IGBT3 technology and features an AlSiC baseplate with internal AlN insulation. The module operates within a junction temperature range of -40 °C to +125 °C. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.45 V at 1200 A and a forward voltage of 2.00 V for the diode. Total power dissipation reaches 8.95 kW at 25 °C case temperature.
Feature Summary
- Integrated anti-parallel diode for inverter applications
- AlSiC baseplate material for enhanced thermal management
- Internal AlN basic insulation layer
- Trenchstop IGBT3 technology
Applications
- Industrial motor drives
- Medium voltage variable frequency drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify component authenticity through authorized Infineon distributors or certified suppliers. Confirm that the received part matches the exact model designation and revision level specified in the official datasheet. Inspect packaging integrity to ensure compliance with moisture sensitivity and electrostatic discharge handling requirements during storage and transit.
Selection Notes
Evaluate thermal resistance values against the specific heatsink design and cooling method employed in the target application. Ensure gate drive circuits provide appropriate voltage levels and current capabilities to manage switching speeds effectively. Consider the module's stray inductance when designing PCB layouts or busbar connections to minimize voltage overshoots during high-speed switching operations.
Part Context
This component belongs to the Infineon IGBT module family utilizing Trenchstop technology. It represents a high-power discrete switch designed for robust industrial environments. The module integrates both the switching element and the freewheeling diode into a single package to simplify circuit topology and reduce overall system footprint.
Replacement Considerations
FZ1200R17KE3B2NOSA1
FAQ
What is the isolation test voltage rating?
The module supports an isolation test voltage of 4.0 kV RMS at 50 Hz for one minute.
What is the recommended mounting torque for M6 screws?
The specified mounting torque for M6 screws is between 4.25 Nm and 5.75 Nm.
What is the typical module stray inductance?
The module stray inductance is typically 12 nH.
