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The FZ1200R17KF4CNOSA1 is a single IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology. It features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 1.2 kA at 25°C. The saturation voltage is 1.9 V, with a power dissipation rating of 7.8 kW. Operating temperatures range from -40°C to +150°C junction temperature. The component uses silicon technology and is housed in a screw-mount tray package.
Verify the exact ordering suffix CNOSA1 against official Infineon documentation to confirm specific manufacturing lot codes or regional compliance variations. Confirm that the requested quantity matches standard factory packaging units to avoid partial reel issues. Ensure compatibility with existing thermal interface materials and mounting hardware specifications before finalizing procurement orders.
Select this module when a single high-current switch rated for 1.7 kV is required. Compare the 1.9 V saturation voltage against system efficiency targets. Verify that the 1.2 kA continuous current rating meets peak load requirements. Check that the screw-mount footprint aligns with the printed circuit board design and heatsink constraints.
This part belongs to the IGBT4 series, which utilizes trench gate and field-stop technologies to improve switching characteristics compared to previous generations. The FZ prefix typically denotes a specific module family within Infineon's discrete semiconductor portfolio designed for industrial power conversion applications.
Direct replacements include FZ1200R17HP4 and FZ1200R17HE4PHPSA1. Verify pinout compatibility and thermal resistance values before substitution. Ensure the replacement part supports the same voltage and current ratings for the target application.