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Product Detailed Parameters
- Description：IGBT MODULE 3300V 2000A
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Full Bridge
- Vce(on) (Max) @ Vge, Ic：4.25V @ 15V, 1.2kA
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：3300 V
- Current - Collector (Ic) (Max)：2000 A
- Power - Max：14500 W
- Current - Collector Cutoff (Max)：12 mA
- Input Capacitance (Cies) @ Vce：150 nF @ 25 V
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Overview
The FZ1200R33KF2CNOSA4 is a single IGBT module with an integrated anti-parallel diode, rated for 3300 V collector-emitter voltage and 1200 A continuous DC collector current. It utilizes an AlSiC baseplate and AlN internal insulation to support high thermal performance. The module operates within a junction temperature range of -40°C to +125°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 5.0 V at 1200 A and a forward voltage of 3.5 V for the diode. Total power dissipation reaches 14.5 kW at 25°C case temperature.
Feature Summary
- AlSiC baseplate construction for enhanced thermal conductivity
- AlN internal insulation for reliable high-voltage isolation
- Integrated anti-parallel diode for inverter applications
Applications
- High-power industrial motor drives
- Medium voltage traction systems
- Wind turbine converters
Procurement Notes
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm RoHS compliance status and check for end-of-life notifications prior to procurement. Ensure storage conditions remain within specified limits to maintain product integrity during handling.
Selection Notes
Evaluate thermal resistance values against system cooling requirements. Verify gate drive compatibility with specified peak voltages and internal resistance. Assess mechanical mounting torque specifications to ensure secure installation without damaging the module structure.
Part Context
This component belongs to Infineon's high-voltage IGBT module portfolio designed for demanding power conversion environments. It represents a specific configuration within the broader family of modules utilizing advanced packaging technologies for superior heat dissipation and electrical reliability.
Replacement Considerations
Consult official Infineon documentation for qualified substitute part numbers. Ensure replacement components match critical electrical ratings and physical dimensions before integration into existing designs.
FAQ
What is the material used for the module baseplate?
The module baseplate is manufactured from Aluminum Silicon Carbide (AlSiC).
What is the maximum operating junction temperature?
The maximum operating junction temperature is +125°C.
What is the isolation test voltage rating?
The isolation test voltage is 6.0 kV RMS at 50 Hz for one minute.
