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The FZ1500R33HE3B60BPSA1 is a single IGBT module from Infineon’s Trenchstop IGBT3 series, utilizing silicon technology. It features a maximum collector-emitter voltage of 3.3 kV and a continuous collector current of 1.5 kA at 25°C. The device exhibits a collector-emitter saturation voltage of 2.55 V and a gate-emitter leakage current of 400 nA. Power dissipation is rated at 2.4 MW, with an operating temperature range spanning from -40°C to +150°C. The component weighs 1.2 kg and is supplied in a tray package.
Verify the specific suffix B60 against official datasheets to confirm mechanical and electrical compatibility with existing designs. Confirm RoHS compliance status through manufacturer documentation. Check export restrictions as this product may require additional documentation for shipment from the United States. Ensure ordering quantities align with factory pack specifications.
Select this module for applications requiring high current handling at 3.3 kV ratings. Consider the 2.55 V saturation voltage for efficiency calculations in high-power circuits. Evaluate thermal management requirements given the 2.4 MW power dissipation rating. Verify that the single configuration meets system topology needs without parallel connection complexities.
This part belongs to Infineon’s Trenchstop IGBT3 family, specifically engineered for high-efficiency power switching. The FZ1500R33HE3B60BPSA1 variant integrates advanced trench field stop technology within a robust silicon structure. It serves as a critical component in heavy-duty industrial equipment where reliability under high stress conditions is mandatory.
Public confirmed substitute part numbers are not available in the provided documentation.