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The FZ1600R12HP4HOSA2 is a single-switch IGBT module utilizing Trench-IGBT4 technology within an IHM-B housing. It features a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (IC nom) of 1600 A at TC = 100°C, extending to 2400 A at TC = 25°C. The repetitive peak collector current (ICRM) reaches 3200 A for 1 ms pulses. Total power dissipation (Ptot) is rated at 9.4 kW at TC = 25°C. The module supports an operating junction temperature range from -40°C to 150°C. Key electrical parameters include a typical VCE sat of 2.05 V at Tvj = 125°C and QG of 12.5 µC.
Verify the specific HOSA2 suffix against official Infineon documentation to confirm exact material content and compliance status. Ensure that the ordering code matches the required technical specifications before finalizing procurement. Cross-reference the datasheet revision to validate all electrical characteristics and thermal resistance values.
Select this component based on its 1200 V rating and 1600 A nominal current capacity. Evaluate the thermal resistance values (RthJC) and stray inductance (LsCE) against the system's switching requirements. Confirm compatibility with the IHM-B housing dimensions and mounting torque specifications for reliable mechanical integration.
This module belongs to the Infineon IGBT4 series, designed for industrial applications requiring high reliability. It utilizes silicon technology and is housed in the IHM-B format. The product line emphasizes design flexibility and low switching costs for demanding power electronics environments.
FZ1600R12HP4 is listed as a related part number. Verify if the base model meets all functional requirements without the specific HOSA2 suffix attributes.