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Product Detailed Parameters
- Description：IGBT MODULE 1200V 1600A
- Series：IHM-B
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Single Switch
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 1.6kA
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：2450 A
- Power - Max：10000 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：110 nF @ 25 V
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Overview
The Infineon FZ1600R12KL4CNOSA1 is a single-switch IGBT module featuring a 1200 V collector-emitter voltage rating and a continuous DC collector current of 1600 A at 80°C case temperature, rising to 2450 A at 25°C. It incorporates low-loss second-generation IGBT technology with soft Emitter Controlled Diode characteristics. The module operates within a junction temperature range of -40°C to 125°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.90 V at 125°C and a total power dissipation capacity of 10 kW. Thermal resistance from junction to case is specified at 12.5 K/kW for the IGBT and 21.0 K/kW for the diode.
Feature Summary
- Integrates low-loss second-generation IGBT technology for optimized switching performance.
- Features a soft Emitter Controlled Diode (ECD) to minimize reverse recovery losses.
- Provides high short-circuit capability with a rated withstand current of 12000 A.
Applications
- Industrial inverter systems
- Medium-power motor drives
- Uninterruptible power supplies
Procurement Notes
Verify component authenticity through authorized distribution channels or direct manufacturer confirmation. Ensure the ordering suffix matches the specific package and marking requirements. Request original datasheets and material content declarations to confirm compliance with applicable industrial standards before finalizing acquisition.
Selection Notes
Evaluate thermal management requirements based on the specified junction-to-case resistance values. Confirm that the gate drive circuitry supports the required peak voltage limits and internal gate resistor specifications. Verify that the application's stray inductance constraints align with the module's safe operating area ratings under switching conditions.
Part Context
This component belongs to the FZ series of high-power IGBT modules manufactured by Infineon Technologies. It utilizes the IHM (Inverted Housing Module) mechanical design, which facilitates efficient mounting and thermal coupling to heatsinks. The module is designed for robust operation in demanding industrial environments requiring high current handling capabilities.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires detailed comparison of electrical ratings, pin configurations, and thermal characteristics with alternative offerings.
FAQ
What is the maximum repetitive peak collector current?
The maximum repetitive peak collector current is 3200 A for a pulse duration of 1 ms.
What is the isolation test voltage of the module?
The isolation test voltage is 2.5 kV RMS at 50 Hz for one minute.
What is the minimum turn-on time for the integrated diode?
The minimum turn-on time is 10.0 µs.
