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The FZ1600R17HP4HOSA2 is a single-switch IGBT module from the Infineon IGBT4 - P4 series. It features a maximum collector-emitter voltage (VCEO) of 1.7 kV and a continuous collector current of 1.6 kA at 25°C. The typical collector-emitter saturation voltage is 1.9 V, with a gate-emitter leakage current of 400 nA. The module has a power dissipation rating of 10.5 kW and operates within a junction temperature range of -40°C to +150°C. It utilizes silicon technology and is housed in a tray package.
Verify the specific ordering suffix against official Infineon documentation to ensure correct variant identification. Confirm RoHS compliance status and manufacturing origin details directly with the supplier or authorized distributor prior to purchase. Check for any recent lifecycle updates or obsolescence notices associated with this specific part number.
Select this component for high-power applications requiring 1.7 kV blocking capability and 1.6 kA continuous current handling. Ensure the cooling system design accommodates the 10.5 kW power dissipation rating. Verify that the gate drive requirements align with the specified leakage and capacitance parameters for stable operation.
This module belongs to the Infineon IGBT4 - P4 product family, which represents an advancement over previous generations like the KE3 series. It offers improved efficiency and switching characteristics compared to older trench field-stop technologies, targeting modern industrial power conversion needs.
FZ1600R17HP4B2BOSA2 is listed as a manufacturer-recommended substitute. Verify pinout compatibility and thermal interface specifications before implementation.