FZ1600R33HE4BPSA1

Overview

The FZ1600R33HE4BPSA1 is a single-switch IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology. It features a collector-emitter voltage (VCES) of 3300 V and a continuous DC collector current (ICDC) of 1600 A at 25°C case temperature. The module incorporates an emitter-controlled diode with a forward voltage (VF) of 2.9 V typ at 25°C. Key electrical parameters include a saturation voltage (VCE,sat) of 2.4 V typ and a maximum repetitive peak collector current (ICRM) of 3200 A. It operates within a junction temperature range of -40°C to +150°C.

Feature Summary

• High short-circuit capability and robustness under demanding electrical conditions
• AlSiC base plate construction for enhanced thermal cycling stability
• Low switching losses combined with low gate charge characteristics
• Positive temperature coefficient for the collector-emitter saturation voltage

Applications

• High-power converters
• Medium-voltage converters
• Motor drives
• Traction drives
• Uninterruptible power supply (UPS) systems
• Active frontend energy recovery applications

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the specific ordering suffix matches the required technical specifications. Ensure compliance with export regulations if applicable. Validate that the product meets the necessary industrial qualification standards before integration into critical systems.

Selection Notes

Select this module for high-power applications requiring 3300 V blocking capability and 1600 A continuous current handling. Consider the AlSiC base plate for environments necessitating superior thermal cycling resistance. Evaluate the thermal resistance values against the system's cooling capacity to ensure junction temperatures remain within the specified operational limits during peak loads.

Part Context

This component belongs to the IHM-B module family, designed for high-power density applications. It utilizes Infineon's IGBT4 technology to achieve improved performance metrics compared to previous generations. The module is qualified for industrial applications according to relevant IEC standards, ensuring reliability in harsh operating environments.

Replacement Considerations

Direct replacements must match the 3300 V rating, 1600 A current capacity, and IHM-B package dimensions. Verify compatibility with existing gate drive requirements and thermal management solutions. Cross-reference datasheets for equivalent switching speeds and thermal resistances to ensure seamless integration without circuit redesign.

FAQ

What is the maximum repetitive peak collector current for this module?

The maximum repetitive peak collector current (ICRM) is 3200 A, limited by the maximum junction temperature.

Does the module feature an isolated base plate?

Yes, the module includes an isolated base plate with a comparative tracking index (CTI) greater than 600.

What is the typical forward voltage of the integrated diode at 25°C?

The typical forward voltage (VF) of the integrated diode is 2.9 V when conducting 1600 A at a junction temperature of 25°C.