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The FZ1800R12HP4B9HOSA2 is a single-switch IGBT module from Infineon Technologies, utilizing the AG-IHMB190 package. It features a 1200 V collector-emitter breakdown voltage and a maximum continuous collector current of 2700 A. The saturation voltage (Vce(on)) is specified at a maximum of 2.05 V under conditions of 15 V gate drive and 1.8 kA collector current. The input capacitance (Cies) measures 110 nF at 25 V. The device operates within a junction temperature range of -40°C to 150°C and supports a maximum power dissipation of 10500 W.
Verify the specific suffix B9 against official Infineon documentation to confirm material composition and compliance status. Ensure the ordering part number matches the exact revision required for your bill of materials. Cross-reference the manufacturer product identifier with authorized distributor catalogs to prevent substitution errors during procurement.
Select this component when designing circuits requiring a single switch rated for 1200 V and up to 2700 A continuous current. Confirm that the thermal management system can handle the 10500 W power dissipation capability. Verify that the gate drive voltage aligns with the 15 V test condition for the specified saturation voltage performance.
This module belongs to the Infineon IGBT4 P4 series, designed for high-power industrial applications. It shares the AG-IHMB190 housing form factor with other high-current variants in the lineup. The HOSA2 suffix indicates specific environmental compliance and traceability attributes defined by the manufacturer for global distribution channels.
Direct replacements include FZ1800R12HP4B9NPSA1 and FZ1800R12HP4_B9. Verify pinout compatibility and thermal interface requirements before substituting. Consult official datasheets to ensure electrical parameters match the original design specifications.