FZ1800R17KE3B2NOSA1

$1,134.16

Description：IGBT MODULE 1700V 1800A
Series：IHM-B

SKU:c46090cc7c43 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE 1700V 1800A
Series：IHM-B
Mfr：Infineon Technologies
Package：Bulk,Tray
IGBT Type：-
Configuration：Single
Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 1.8kA
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 125°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1700 V
Current - Collector (Ic) (Max)：2850 A
Power - Max：12.5 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：160 nF @ 25 V

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FZ1800R17KE3B2NOSA1

Overview

The FZ1800R17KE3B2NOSA1 is a single-switch IGBT module from Infineon Technologies, utilizing Trenchstop IGBT3-E3 technology. It features an AlSiC baseplate and AlN internal insulation for high thermal conductivity and electrical isolation. The module supports a collector-emitter voltage of 1700 V with a nominal continuous DC collector current of 1800 A at 80°C case temperature. Key electrical parameters include a maximum repetitive peak collector current of 3600 A, a total power dissipation of 12.5 kW, and a gate-emitter peak voltage rating of ±20 V. The device operates within a junction temperature range of -40°C to 125°C.

Feature Summary

Integrates Trenchstop IGBT3-E3 technology for optimized switching performance.
Utilizes an Aluminum Silicon Carbide (AlSiC) baseplate for enhanced thermal management.
Features Aluminum Nitride (AlN) internal insulation for reliable basic insulation.
Designed for robust operation in industrial and traction environments.

Applications

Industrial motor drives
Traction applications
High-power inverters

Procurement Notes

Verify the exact ordering suffix against official documentation to ensure correct configuration. Confirm component authenticity through authorized channels. Check for specific environmental compliance certifications required by your region. Ensure storage conditions remain within the specified temperature limits prior to installation.

Selection Notes

Evaluate thermal resistance values relative to your heatsink design to maintain safe junction temperatures. Consider the stray inductance specifications when designing the gate drive circuitry. Verify that the mounting torque meets the mechanical requirements for secure terminal connections. Assess the short-circuit withstand capability against potential fault currents in your system.

Part Context

This component belongs to the FZ1800 series of high-power IGBT modules. It represents a specific variant within Infineon's Trenchstop family, distinguished by its single-switch topology and AlSiC base construction. The module is engineered for demanding power conversion tasks requiring high current handling and thermal stability.