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The FZ2400R12HE4B9NPSA1 is a single-switch IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4-E4 technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 2400 A at 25°C. The typical collector-emitter saturation voltage is 1.75 V at 25°C. The module operates within a junction temperature range of -40°C to +150°C and is housed in the IHM-B package with dimensions of 140 mm by 190 mm.
Verify the exact suffix against official Infineon documentation, as variations like B9 or NPSA1 may indicate specific packaging or qualification differences. Confirm RoHS compliance status and export restrictions directly with the manufacturer or authorized distributors before finalizing procurement plans.
Select this module for applications requiring high current density and robust thermal performance. Ensure the cooling system supports the IHM-B package dimensions and that the gate drive circuitry matches the IGBT4-E4 characteristics. Verify compatibility with the required voltage class and switching frequency for the target inverter design.
This component belongs to the IHM-B series of high-power IGBT modules, designed for industrial and traction markets. It represents part of Infineon's IGBT4-E4 product family, which combines trench and fieldstop technologies for optimized switching losses and conduction performance in high-power conversion systems.
Direct substitutes include other FZ2400R12HE4 variants such as FZ2400R12HE4_B9. Cross-referencing pinouts and thermal characteristics is essential when considering alternative packages within the same voltage and current ratings.