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The FZ2400R12HP4HOSA2 is a single-switch IGBT module from Infineon's IHM-B series, utilizing Trench-IGBT4 technology. It features a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (ICDC) of 2400 A at 95°C case temperature. The repetitive peak collector current (ICRM) reaches 4800 A. Key electrical parameters include a maximum saturation voltage (VCEsat) of 2.10 V at 150°C and a forward voltage (VF) of 2.35 V for the integrated diode. Thermal resistance from junction to case is 12.0 K/kW for the IGBT and 20.0 K/kW for the diode. The module weighs 1300 g and operates within a junction temperature range of -40°C to 150°C.
Verify the specific HOSA2 suffix against official documentation to confirm material content or compliance status. Confirm that the component matches the standard IHM-B package dimensions and terminal layout. Ensure thermal interface materials are compatible with the specified RthCH values. Validate that the ordering code corresponds to the correct datasheet revision for accurate parameter reference.
Select this module for applications requiring high current handling in a compact industrial footprint. Consider the internal gate resistor value when designing the gate drive circuit to manage switching speeds. Evaluate the stray inductance of 9.0 nH for potential voltage overshoot during commutation. Ensure the cooling system can maintain the case temperature within the rated limits for the desired current output.
This component belongs to the Infineon FZ2400R12HP4 family, specifically the IHM-B series designed for high-power industrial applications. The HOSA2 suffix typically denotes specific material or environmental compliance variations within the standard product line. It shares core electrical characteristics with other variants in the 2400A/1200V category but may differ in packaging details or regulatory certifications.
Direct replacements must match the 1200V/2400A rating and IHM-B mechanical form factor. Verify compatibility of gate drive requirements due to similar internal gate resistance. Check if alternative models offer improved thermal resistance or different switching speed characteristics suitable for the specific application constraints.